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供应商	Everspin Technologies
型号	1 Mb Unlimited Endurance Non-Volatile RAM - 35 nS Write
类型	Hard IP
到期日	In Production
源网址	View more
特征	Non-Volatility without batteries and without special transistors Endurance: Unlimited Number of Write Cycles Retention: > 20 years Byte Addressable 35 nS Write Cycle: Orders of Magnitude Faster than Flash and EEPROM Memory cell without leakage. State is stored magnetically not electrically Soft error rate from alpha radiation too low to measure (<0.1 FIT/Mb) 30 MHz Cycle. Single Cycle Write, Single Cycle Read Asynchronous interface Extended operating temperature range
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详情

Everspin introduced industry-first 4 Mb stand-alone Magnetoresistive RAM (MRAM) in 2006. MRAM's storage cells are integrated with the top layers of metal (Everspin wafer fab) over standard CMOS process (foundry). The peripheral Read/Write/Decode circuits are standard CMOS.

The 1 Mb embedded MRAM is used like an SRAM with the unique features of: nonvolatility with > 20 years retention, unlimited endurance, fast write and no leakage in the storage array.

No high voltage required for writing.

Non-destructive read.

Smaller and larger configurations can be made available in 130 nm and 180 nm, with synchronous or asynchronous interface.

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